The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2022
Filed:
Feb. 23, 2018
Sumitomo Electric Industries, Ltd., Osaka, JP;
Masanori Morishita, Kobe, JP;
Hidetoshi Takayama, Kobe, JP;
Yasuaki Higuchi, Kobe, JP;
Yoshiaki Hagi, Kobe, JP;
SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka, JP;
Abstract
A gallium arsenide crystal substrate has a diameter not smaller than 150 mm and not greater than 205 mm and a thickness not smaller than 300 μm and not greater than 800 μm and includes any of a flat portion and a notch portion. In any of a first flat region and a first notch region, when an atomic concentration of silicon is not lower than 3.0×10cmand not higher than 3.0×10cm, the gallium arsenide crystal substrate has an average dislocation density not lower than 0 cmand not higher than 15000 cm, and when an atomic concentration of carbon is not lower than 1.0×10cmand not higher than 5.0×10cm, the gallium arsenide crystal substrate has an average dislocation density not lower than 3000 cmand not higher than 20000 cm.