The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2022

Filed:

Apr. 08, 2020
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Fang-Sheng Chou, Tainan, TW;

Ching Chang, New Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); G11C 29/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1116 (2013.01); G11C 29/12 (2013.01); H01L 27/1104 (2013.01); G11C 2029/1206 (2013.01);
Abstract

The present invention provides a test key structure, the test key structure a substrate, a plurality of test key cells disposed on the substrate, wherein each test key cell includes a first gate structure arranged along a first direction (X-axis), a first diffusion region, a second diffusion region, a connection diffusion region and a share contact arranged along a second direction (Y-axis), wherein the first gate structure crosses over the first diffusion region to form a pull-up transistor (PU), the second gate structure crosses over the second diffusion region to form a pull-down transistor (PD), and wherein the plurality of share contacts and the plurality of connection diffusion regions of the plurality of test key cells are electrically connected to each other.


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