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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11404265 B1

PDFFull Text
Date of Patent:
Aug. 02, 2022

Filed:

Jan. 23, 2020

Film deposition method

Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Kazumi Kubo, Iwate, JP;

Takayuki Karakawa, Yamanashi, JP;

Yutaka Takahashi, Iwate, JP;

Assignee:

Tokyo Electron Limited, Tokyo, JP;

Attorney:

IPUSA, PLLC

Primary Examiner:

Brook Kebede

Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/02 (2006.01); C23C 16/46 (2006.01); H01L 21/687 (2006.01); C23C 16/44 (2006.01); C23C 16/50 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02274 (2013.01); C23C 16/345 (2013.01); C23C 16/401 (2013.01); C23C 16/4408 (2013.01); C23C 16/45565 (2013.01); C23C 16/46 (2013.01); C23C 16/50 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/02178 (2013.01); H01L 21/02186 (2013.01); H01L 21/02205 (2013.01); H01L 21/02211 (2013.01); H01L 21/68764 (2013.01); H01L 21/68771 (2013.01);
Abstract

A film deposition method is provided. In the method, chlorine gas is activated in a plasma generator, and an adsorption inhibitor group is formed by adsorbing the activated chlorine gas on a surface of a substrate in a processing chamber. A source gas containing chlorine and one of silicon and a metal is adsorbed on a region without the adsorption inhibitor group of the surface of the substrate, and a nitride film is deposited by supplying a nitriding gas to the surface of the substrate and causing the nitriding gas to react with the source gas. The substrate on which the nitride film is deposited is carried out of the processing chamber, and an inside of the plasma generator is purged with activated oxygen gas.

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