The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2022

Filed:

Oct. 09, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Edward McGlaughlin, Minneapolis, MN (US);

Ying Yu Tai, Mountain View, CA (US);

Samir Mittal, Palo Alto, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 5/14 (2006.01); G11C 11/4074 (2006.01); G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G11C 5/14 (2013.01); G06F 3/0608 (2013.01); G06F 3/0679 (2013.01); G11C 11/4074 (2013.01); G11C 13/003 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01);
Abstract

A processing device determines a subset of a plurality of blocks from a volatile memory device of a memory sub-system, retrieves the subset of the plurality of blocks from the volatile memory device, and writes the subset of the plurality of blocks to a non-volatile cross point array memory device of the memory sub-system using a first type of write operation. The processing device further receives an indication of a power loss in the memory sub-system, and responsive to receiving the indication of the power loss, writes a remainder of the plurality of blocks to the non-volatile cross point array memory device using a second type of write operation.


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