The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2022
Filed:
Feb. 11, 2021
Applicants:
Ecole Polytechnique Federale DE Lausanne (Epfl), Lausanne, CH;
Roche Sequencing Solutions, Inc., Pleasanton, CA (US);
Inventors:
Jiandong Feng, Morges, CH;
Ke Liu, Chavannes-pres-Renens, CH;
Aleksandra Radenovic, St. Sulpice, CH;
Yann Astier, Livermore, CA (US);
Assignees:
Ecole Polytechnique Federale De Lausanne (EPFL), Lausanne, CH;
Roche Sequencing Solutions, Inc., Pleasanton, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C25F 3/12 (2006.01); B23H 9/14 (2006.01); B23H 7/20 (2006.01); C25F 7/00 (2006.01); G01N 33/487 (2006.01); G01N 27/414 (2006.01); C12Q 1/6869 (2018.01); G01N 27/447 (2006.01); G01R 19/00 (2006.01);
U.S. Cl.
CPC ...
C25F 3/12 (2013.01); B23H 7/20 (2013.01); B23H 9/14 (2013.01); C12Q 1/6869 (2013.01); C25F 7/00 (2013.01); G01N 27/4145 (2013.01); G01N 27/44791 (2013.01); G01N 33/48721 (2013.01); G01R 19/0092 (2013.01);
Abstract
The invention relates to a method for making nanopores in thin layers or monolayers of transition metal dichalcogenides that enables accurate and controllable formation of pore within those thin layer(s) with sub-nanometer precision.