The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2022

Filed:

Jan. 04, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Byunghoon Yoon, Cupertino, CA (US);

Seshadri Ganguli, Sunnyvale, CA (US);

Xi Cen, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/02 (2006.01); C23C 16/04 (2006.01); C23C 16/18 (2006.01); C23C 16/455 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
C23C 16/02 (2013.01); C23C 16/04 (2013.01); C23C 16/18 (2013.01); C23C 16/45534 (2013.01); H01L 21/76843 (2013.01); H01L 21/76876 (2013.01); H01L 21/76879 (2013.01); H01L 23/53209 (2013.01); H01L 23/53238 (2013.01); H01L 23/53252 (2013.01); H01L 23/53266 (2013.01);
Abstract

Methods of depositing a metal film with high purity are discussed. A catalyst enhanced CVD process is utilized comprising an alkyl halide catalyst soak and a precursor exposure. The precursor comprises a metal precursor having the general formula (I): M-L(L), wherein M is a metal, Lis an aromatic ligand, Lis an aliphatic ligand, and y is a number in the range of from 2 to 8 to form a metal film on the substrate surface, wherein the Lcomprises 1,5-hexdiene, 1,4-hexadiene, and less than 5% of 1,3-hexadiene. Selective deposition of a metal film with high purity on a metal surface over a dielectric surface is described.


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