The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2022

Filed:

Sep. 05, 2018
Applicant:

Hamamatsu Photonics K.k., Hamamatsu, JP;

Inventors:

Kazumasa Kosugi, Hamamatsu, JP;

Shintaro Kamada, Hamamatsu, JP;

Kazuhisa Yamamura, Hamamatsu, JP;

Assignee:

HAMAMATSU PHOTONICS K.K., Hamamatsu, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/0236 (2006.01); H01L 31/115 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02363 (2013.01); H01L 31/115 (2013.01); H01L 31/1876 (2013.01);
Abstract

A through-slit is provided in a semiconductor wafer. A first virtual cutting line defines a chip portion including an energy ray sensitive region as viewed from a direction perpendicular to a first main surface. The shortest distance from a second virtual cutting line to the edge of a second semiconductor region is smaller than the shortest distance from the first virtual cutting line to the edge of the second semiconductor region. The through-slit penetrates through the semiconductor wafer in the thickness direction along the second virtual cutting line. A side surface to which a first semiconductor region is exposed is formed in the chip portion by providing the through-slit. A fourth semiconductor region of a first conductivity type is provided on the side surface side of the chip portion by adding impurities to the side surface to which the first semiconductor region is exposed.


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