The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2022
Filed:
Apr. 27, 2020
Three-dimensional memory device employing thinned insulating layers and methods for forming the same
Applicant:
Sandisk Technologies Llc, Addison, TX (US);
Inventors:
James Kai, Santa Clara, CA (US);
Senaka Kanakamedala, San Jose, CA (US);
Johann Alsmeier, San Jose, CA (US);
Assignee:
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/11578 (2017.01); H01L 27/11582 (2017.01); H01L 21/8234 (2006.01); H01L 29/423 (2006.01); H01L 27/1157 (2017.01); H01L 27/11575 (2017.01); H01L 27/11568 (2017.01); H01L 29/49 (2006.01); H01L 27/11524 (2017.01); H01L 29/788 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/823487 (2013.01); H01L 29/4234 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01); H01L 27/11568 (2013.01); H01L 27/11575 (2013.01); H01L 29/40117 (2019.08); H01L 29/4975 (2013.01); H01L 29/7883 (2013.01);
Abstract
A three-dimensional memory device includes an alternating stack of word lines and at least one insulating layers or air gaps located over a substrate, a memory opening fill structure extending through the alternating stack. The memory opening fill structure includes a memory film and a vertical semiconductor channel contacting an inner sidewall of the memory film. The word lines are thicker than the insulating layers or air gaps.