The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2022
Filed:
Sep. 10, 2020
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Johannes Georg Laven, Taufkirchen, DE;
Roman Baburske, Otterfing, DE;
Frank Dieter Pfirsch, Munich, DE;
Alexander Philippou, Munich, DE;
Christian Philipp Sandow, Haar, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 27/07 (2006.01); H01L 29/739 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 21/225 (2006.01); H01L 29/861 (2006.01); H01L 21/265 (2006.01); H01L 21/033 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0716 (2013.01); H01L 21/0337 (2013.01); H01L 21/2253 (2013.01); H01L 21/26506 (2013.01); H01L 21/823487 (2013.01); H01L 29/083 (2013.01); H01L 29/66333 (2013.01); H01L 29/7397 (2013.01); H01L 29/861 (2013.01);
Abstract
An RC IGBT with an n-barrier region in a transition section between a diode section and an IGBT section is presented.