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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11398380 B1

PDFFull Text
Date of Patent:
Jul. 26, 2022

Filed:

May. 08, 2020

Method and structure of middle layer removal

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Nai-Chia Chen, Hsinchu, TW;

Wan Hsuan Hsu, Taoyuan, TW;

Chia-Wei Wu, Miaoli County, TW;

Neng-Jye Yang, Hsinchu, TW;

Chun-Li Chou, Jhubei, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Khaja Ahmad

Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/027 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); H01L 21/0206 (2013.01); H01L 21/0332 (2013.01); H01L 21/0335 (2013.01); H01L 21/0338 (2013.01); H01L 21/0273 (2013.01); H01L 21/31111 (2013.01); H01L 21/31122 (2013.01); H01L 21/31138 (2013.01); H01L 21/32137 (2013.01);
Abstract

A middle layer removal method is provided. The method includes providing a substrate having a structure formed on the substrate, and forming a spacer layer on the structure. The method includes forming a mask layer over the spacer layer, the mask layer including a first layer, a second layer over the first layer, and a third layer over the second layer. The method also includes patterning the third layer of the mask layer, and etching the first layer and the second layer of the mask layer to form an opening to expose a bottom surface of the second layer. The method further includes removing the second layer using a wet etchant.

Find Patent Forward Citations

Chen, Nai-Chia. (2022). Method and structure of middle layer removal (U.S. Patent No. 11398380). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11398380

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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