The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 2022

Filed:

Jan. 08, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Hyunui Lee, Kanagawa, JP;

Takamasa Suzuki, Tokyo, JP;

Yasuo Satoh, Ibaraki, JP;

Yuan He, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/14 (2006.01); G11C 11/4074 (2006.01); G11C 11/4091 (2006.01); G11C 11/4063 (2006.01); G11C 11/4099 (2006.01); H01L 27/108 (2006.01); G11C 5/06 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4074 (2013.01); G11C 11/4063 (2013.01); G11C 11/4091 (2013.01); G11C 11/4099 (2013.01); H01L 27/10802 (2013.01); G11C 5/063 (2013.01);
Abstract

Embodiments include an integrated assembly having a deck over a base, and having memory cells supported by the deck. Each of the memory cells includes a capacitive unit and a transistor. The individual capacitive units of the memory cells each have a storage node electrode, a plate electrode, and a capacitor dielectric material between the storage node electrode and the plate electrode. A reference-voltage-generator includes resistive units supported by the deck. The resistive units are similar to the memory cells but include interconnecting units in place of the capacitive units. The interconnecting units of some adjacent resistive units are shorted to one another.


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