The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2022

Filed:

Apr. 17, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jaeuk Shin, Suwon-si, KR;

Youngtak Kim, Hwaseong-si, KR;

Sangjine Park, Suwon-si, KR;

Hyeyeong Seo, Hwaseong-si, KR;

Wonjun Lee, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1233 (2013.01); H01L 27/2463 (2013.01); H01L 45/06 (2013.01); H01L 45/1253 (2013.01); H01L 45/1608 (2013.01);
Abstract

A semiconductor device is provided including a plurality of first conductive patterns disposed on a substrate. A first insulating pattern is disposed between the plurality of first conductive patterns. A plurality of second conductive patterns is disposed on the plurality of first conductive patterns. A first memory cell structure is disposed between the plurality of first conductive patterns and the plurality of second conductive patterns. A second insulating pattern is disposed on the first insulating pattern and on a side surface of the first memory cell structure. A first vertical structure is disposed on the first insulating pattern and passing through the second insulating pattern to an upper surface of the substrate. The first insulating pattern has a plurality of recess portions. The plurality of recess portions include a first recess portion and a second recess portion. The first recess portion and the second recess portion have different depths.


Find Patent Forward Citations

Loading…