The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2022

Filed:

Dec. 28, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Po-Han Huang, Tainan, TW;

Chien Nan Tu, Kaohsiung, TW;

Chi-Yuan Wen, Tainan, TW;

Ming-Chi Wu, Kaohsiung, TW;

Yu-Lung Yeh, Kaohsiung, TW;

Hsin-Yi Kuo, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0232 (2014.01); H01L 27/146 (2006.01); H01L 27/30 (2006.01); H01L 31/02 (2006.01); H01L 31/0224 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0232 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14603 (2013.01); H01L 27/14629 (2013.01); H01L 27/14685 (2013.01); H01L 27/307 (2013.01); H01L 31/02002 (2013.01); H01L 31/0224 (2013.01); H01L 27/1462 (2013.01); H01L 27/14612 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01);
Abstract

The present disclosure relates to an integrated chip that has a light sensing element arranged within a substrate. An absorption enhancement structure is arranged along a back-side of the substrate, and an interconnect structure is arranged along a front-side of the substrate. A reflection structure includes a dielectric structure and a plurality of semiconductor pillars that matingly engage the dielectric structure. The dielectric structure and semiconductor pillars are arranged along the front-side of the substrate and are spaced between the light sensing element and the interconnect structure. The plurality of semiconductor pillars and the dielectric structure are collectively configured to reflect incident light that has passed through the absorption enhancement structure and through the light sensing element back towards the light sensing element before the incident light strikes the interconnect structure.


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