The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2022
Filed:
Dec. 27, 2017
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Ayan Kar, Portland, OR (US);
Kinyip Phoa, Beaverton, OR (US);
Justin S. Sandford, Tigard, OR (US);
Junjun Wan, Portland, OR (US);
Akm A. Ahsan, Portland, OR (US);
Leif R. Paulson, Portland, OR (US);
Bernhard Sell, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01); H01L 29/66 (2006.01); H01L 29/8605 (2006.01);
U.S. Cl.
CPC ...
H01L 29/94 (2013.01); H01L 29/66166 (2013.01); H01L 29/66189 (2013.01); H01L 29/8605 (2013.01);
Abstract
This disclosure illustrates a FinFET based dual electronic component that may be used as a capacitor or a resistor and methods to manufacture said component. A FinFET based dual electronic component comprises a fin, source and drain regions, a gate dielectric, and a gate. The fin is heavily doped such that semiconductor material of the fin becomes degenerate.