The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2022

Filed:

Feb. 04, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Sandeep Ramasamudra Suresha, Boise, ID (US);

Terrence B. McDaniel, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 29/45 (2006.01); H01L 21/283 (2006.01); H01L 27/108 (2006.01); H01L 29/78 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41741 (2013.01); H01L 21/283 (2013.01); H01L 27/10805 (2013.01); H01L 29/401 (2013.01); H01L 29/45 (2013.01); H01L 29/7827 (2013.01); H01L 29/41766 (2013.01);
Abstract

A microelectronic device comprises a conductive structure, a metal nitride material, and a metal silicide material. The conductive structure comprises a first portion having a first width, and a second portion under the first portion and extending into a semiconductive material. The second portion has a tapered profile defining additional widths varying from the first width at an upper boundary of the second portion to a second width less than the first width at a lower boundary of the second portion. The metal nitride material substantially surrounds outer surfaces of the first portion and the second portion of the conductive structure. The metal silicide material substantially covers outer surfaces of the metal nitride material within vertical boundaries of the second portion of the conductive structure. Related methods, memory devices, and electronic systems are also described.


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