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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11393906 B1

PDFFull Text
Date of Patent:
Jul. 19, 2022

Filed:

Nov. 07, 2017

Crystalline oxide semiconductor film and semiconductor device

Applicant:

Flosfia Inc., Kyoto, JP;

Inventors:

Isao Takahashi, Kyoto, JP;

Takashi Shinohe, Kyoto, JP;

Rie Tokuda, Kyoto, JP;

Masaya Oda, Kyoto, JP;

Toshimi Hitora, Kyoto, JP;

Assignee:

FLOSFIA INC., Kyoto, JP;

Attorney:

Wenderoth, Lind & Ponack, L.L.P.

Primary Examiner:

Ahmed N Sefer

Int. Cl.
CPC ...
H01L 29/227 (2006.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01); C30B 25/02 (2006.01); H01L 29/78 (2006.01); H01L 29/778 (2006.01); H01L 29/808 (2006.01); H01L 29/872 (2006.01); H01L 29/812 (2006.01); H01L 29/12 (2006.01); C23C 16/40 (2006.01); C30B 29/16 (2006.01); H01L 29/739 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
H01L 29/227 (2013.01); C23C 16/40 (2013.01); C30B 25/02 (2013.01); C30B 29/16 (2013.01); H01L 21/02433 (2013.01); H01L 29/045 (2013.01); H01L 29/12 (2013.01); H01L 29/24 (2013.01); H01L 29/739 (2013.01); H01L 29/778 (2013.01); H01L 29/78 (2013.01); H01L 29/808 (2013.01); H01L 29/812 (2013.01); H01L 29/872 (2013.01);
Abstract

A crystalline oxide semiconductor film with an enhanced electrical property is provided. By use of a mist CVD apparatus, a crystalline oxide semiconductor film with a corundum structure and a principal plane that is an a-plane or an m-plane was obtained on a crystalline substrate by atomizing a raw-material solution containing a dopant that is an n-type dopant to obtain atomized droplets, carrying the atomized droplets by carrier gas onto the crystalline substrate that is an a-plane corundum-structured crystalline substrate or an m-plane corundum-structured crystalline substrate placed in a film-formation chamber, and the atomized droplets were thermally reacted to form the crystalline oxide semiconductor film on the crystalline substrate.

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