The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2022
Filed:
Aug. 14, 2019
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Chao Sun, Wuhan, CN;
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Abstract
High voltage semiconductor device and manufacturing method thereof are disclosed. The high voltage semiconductor device includes a semiconductor substrate, a gate structure, at least one first isolation structure and at least one second isolation structure, and at least one first drift region. The gate structure is disposed on the semiconductor substrate. The first isolation structure and the second isolation structure are disposed in an active area of the semiconductor substrate at a side of the gate structure. An end of the second isolation structure is disposed between the first isolation structure and the gate structure, and an end of the first isolation structure is disposed between the first doped region and the second isolation structure. A bottom of the at least one first isolation structure and a bottom of the at least one second isolation structure are deeper than a bottom of the first drift region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile