The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2022

Filed:

Mar. 18, 2020
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Hyangkeun Yoo, Seongnam-si, KR;

Seho Lee, Yongin-si, KR;

Jae-Gil Lee, Seoul, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 27/11585 (2017.01); H01L 29/78 (2006.01); G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11585 (2013.01); G11C 11/223 (2013.01); H01L 29/78391 (2014.09);
Abstract

A ferroelectric memory device according to an aspect of the present disclosure includes a substrate having a channel layer, a first ferroelectric layer disposed on the channel layer, a ferroelectric induction layer disposed on the first ferroelectric layer, the ferroelectric induction layer including an insulator, a second ferroelectric layer disposed on the ferroelectric induction layer, and a gate electrode layer disposed on the second ferroelectric layer.


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