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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11393784 B1

PDFFull Text
Date of Patent:
Jul. 19, 2022

Filed:

Aug. 30, 2017

Semiconductor package devices and method for forming semiconductor package devices

Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Roland Rupp, Lauf, DE;

Alexander Breymesser, Villach, AT;

Andre Brockmeier, Villach, AT;

Carsten von Koblinski, Villach, AT;

Francisco Javier Santos Rodriguez, Villach, AT;

Ronny Kern, Finkenstein, AT;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:

Murphy, Bilak & Homiller, PLLC

Primary Examiner:

Mary A Wilczewski

Assistant Examiner:

Tsz K Chiu

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/30 (2006.01); H01L 21/46 (2006.01); H01L 23/00 (2006.01); H01L 21/56 (2006.01); H01L 23/29 (2006.01); H01L 21/48 (2006.01); H01L 21/78 (2006.01); H01L 23/31 (2006.01); H01L 23/367 (2006.01);
U.S. Cl.
CPC ...
H01L 24/94 (2013.01); H01L 21/4803 (2013.01); H01L 21/561 (2013.01); H01L 21/78 (2013.01); H01L 23/291 (2013.01); H01L 23/3171 (2013.01); H01L 23/367 (2013.01); H01L 24/05 (2013.01); H01L 24/83 (2013.01); H01L 23/3114 (2013.01); H01L 24/03 (2013.01); H01L 2224/0332 (2013.01); H01L 2224/03312 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05005 (2013.01); H01L 2224/83893 (2013.01); H01L 2224/83894 (2013.01); H01L 2224/94 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/10329 (2013.01); H01L 2924/12032 (2013.01); H01L 2924/13091 (2013.01);
Abstract

A method for forming semiconductor devices includes attaching a glass structure to a wide band-gap semiconductor wafer having a plurality of semiconductor devices. The method further includes forming at least one pad structure electrically connected to at least one doping region of a semiconductor substrate of the wide band-gap semiconductor wafer, by forming electrically conductive material within at least one opening extending through the glass structure.

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