The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2022

Filed:

Nov. 16, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Ming Zhu, Hsinchu, TW;

Bao-Ru Young, Hsinchu, TW;

Harry Hak-Lay Chuang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 21/321 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823814 (2013.01); H01L 21/3212 (2013.01); H01L 21/82385 (2013.01); H01L 21/823864 (2013.01); H01L 21/823878 (2013.01); H01L 27/0922 (2013.01); H01L 27/0928 (2013.01); H01L 29/0642 (2013.01);
Abstract

A semiconductor device includes a substrate with an isolation region surrounding a P-active region and an N-active region, a first gate electrode comprising a first metal composition over the N-active region, and a second gate electrode with a center portion over the P-active region and an endcap portion over the isolation region. The endcap portion includes a first metal composition, and the center portion includes a second metal composition different from the first metal composition, and the center portion and the endcap portion do not overlap. An inner sidewall of the endcap portion is substantially aligned with a sidewall of the isolation region.


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