The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11393726 B1

Date of Patent:

Jul. 19, 2022

Filed:

Nov. 16, 2020

Metal gate structure of a cmos semiconductor device and method of forming the same

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Ming Zhu, Hsinchu, TW;

Bao-Ru Young, Hsinchu, TW;

Harry Hak-Lay Chuang, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Hauptman Ham, LLP

Primary Examiner:

Christine A Enad

Int. Cl.

CPC ...

H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 21/321 (2006.01);

U.S. Cl.

CPC ...

H01L 21/823814 (2013.01); H01L 21/3212 (2013.01); H01L 21/82385 (2013.01); H01L 21/823864 (2013.01); H01L 21/823878 (2013.01); H01L 27/0922 (2013.01); H01L 27/0928 (2013.01); H01L 29/0642 (2013.01);

Abstract

A semiconductor device includes a substrate with an isolation region surrounding a P-active region and an N-active region, a first gate electrode comprising a first metal composition over the N-active region, and a second gate electrode with a center portion over the P-active region and an endcap portion over the isolation region. The endcap portion includes a first metal composition, and the center portion includes a second metal composition different from the first metal composition, and the center portion and the endcap portion do not overlap. An inner sidewall of the endcap portion is substantially aligned with a sidewall of the isolation region.

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Zhu, Ming. (2022). Metal gate structure of a cmos semiconductor device and method of forming the same (U.S. Patent No. 11393726). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11393726

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile