The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2022
Filed:
Sep. 25, 2019
International Business Machines Corporation, Armonk, NY (US);
Ruqiang Bao, Niskayuna, NY (US);
Vijay Narayanan, New York, NY (US);
Terence B. Hook, Jericho, VT (US);
Hemanth Jagannathan, Niskayuna, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A method for fabricating a semiconductor device including multiple pairs of threshold voltage (Vt) devices includes forming a stack on a base structure having a first region corresponding to a first pair of Vt devices, a second region corresponding to a second pair of Vt devices and a third region corresponding to a third pair of Vt devices. The stack includes a first dipole layer, a first sacrificial layer formed on the first dipole layer, a second sacrificial layer formed on the first sacrificial layer, and a third sacrificial layer formed on the second sacrificial layer. The method further includes forming a second dipole layer different from the first dipole layer.