The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2022

Filed:

Aug. 25, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Vamsi Pavan Rayaprolu, San Jose, CA (US);

Giuseppina Puzzilli, Boise, ID (US);

Karl D. Schuh, Santa Cruz, CA (US);

Jeffrey S. McNeil, Jr., Nampa, ID (US);

Kishore K. Muchherla, Fremont, CA (US);

Ashutosh Malshe, Fremont, CA (US);

Niccolo′ Righetti, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01); G11C 11/56 (2006.01); G11C 16/34 (2006.01); G11C 29/50 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0652 (2013.01); G06F 3/0604 (2013.01); G06F 3/0619 (2013.01); G06F 3/0649 (2013.01); G06F 3/0653 (2013.01); G06F 3/0679 (2013.01); G11C 11/5642 (2013.01); G11C 16/349 (2013.01); G11C 29/50004 (2013.01);
Abstract

A signal associated with performance of a memory operation can be applied to a memory cell of a first group of memory cells that have undergone PECs within a first range. The signal can have a first magnitude corresponding to a second range of PECs. Whether differences between a first target voltage and the signal and between a second target voltage and the applied signal are at least the threshold value can be determined. Responsive to determining that the differences are at least the threshold value, the first group of memory cells can be associated with a first calibration cluster and the signal having a second magnitude corresponding to a third range of PECs can be applied to a memory cell of a second group of memory cells that have undergone respective quantities of PECs within the second range.


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