The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2022

Filed:

Dec. 20, 2017
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Masayuki Harashima, Nirasaki, JP;

Yukio Sano, Nirasaki, JP;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/44 (2006.01); C23C 16/458 (2006.01); C23C 16/46 (2006.01); H01L 21/687 (2006.01); B08B 5/00 (2006.01); B08B 7/00 (2006.01);
U.S. Cl.
CPC ...
C23C 16/4405 (2013.01); B08B 5/00 (2013.01); B08B 7/0071 (2013.01); C23C 16/4583 (2013.01); C23C 16/46 (2013.01); H01L 21/68757 (2013.01);
Abstract

A cleaning method of cleaning a film-forming device, which includes a processing container having a substrate holder provided in the processing container so as to hold a SiC substrate, and which supplies a source gas to the processing container, an interior of which is depressurized, and heats the SiC substrate so as to perform a film formation on the SiC substrate, includes: a reaction product removal process of removing a reaction product, which is formed during the film formation and attached to portions other than the SiC substrate, by supplying a ClFgas into the processing container after the film formation; and a residue removal process of removing a substance, which remains after the reaction product removal process and serves as an unnecessary impurity or causes a defect during a subsequent film formation, by supplying air into the processing container.


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