The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2022
Filed:
Dec. 24, 2020
United Microelectronics Corp., Hsin-Chu, TW;
Chun-Sung Huang, Changhua County, TW;
Shen-De Wang, Hsinchu County, TW;
Chia-Ching Hsu, Yunlin County, TW;
Wang Xiang, Singapore, SG;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A memory device includes a main cell on a substrate, a first reference cell adjacent to one side of the main cell, and a second reference cell adjacent to another side of the main cell. Preferably, the main cell includes a first gate electrode on the substrate, a second gate electrode on one side of the first gate electrode and covering a top surface of the first gate electrode, a first charge trapping layer between the first gate electrode and the second gate electrode and including a first oxide-nitride-oxide (ONO) layer, a third gate electrode on another side of the first gate electrode and covering the top surface of the first gate electrode, and a second charge trapping layer between the first gate electrode and the third gate electrode and including a second ONO layer.