The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2022
Filed:
Dec. 20, 2019
Three-dimensional memory device containing metal-organic framework inter-word line insulating layers
Sandisk Technologies Llc, Addison, TX (US);
Ramy Nashed Bassely Said, San Jose, CA (US);
Senaka Kanakamedala, San Jose, CA (US);
Fei Zhou, San Jose, CA (US);
Raghuveer S. Makala, Campbell, CA (US);
Yao-Sheng Lee, Tampa, FL (US);
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Abstract
A three-dimensional memory device includes a vertically alternating stack of insulating layers and electrically conductive layers located over a top surface of a substrate and memory stack structures extending through the alternating stack. Each of the memory stack structures contains a respective memory film and a respective vertical semiconductor channel, and each of the insulating layers contains a metal-organic framework (MOF) material portion. The MOF material portion has a low dielectric constant, and reduces RC coupling between the electrically conductive layers. An optional airgap may be located within the MOF material portion to further reduce the effective dielectric constant. Optionally, discrete charge storage regions or floating gates may be formed only at the levels of the electrically conductive layers to reduce program disturb and noise in the device.