The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2022
Filed:
Jun. 21, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Cheng-Han Wu, Hsinchu, TW;
Chie-Iuan Lin, Hsinchu County, TW;
Kuei-Ming Chang, New Taipei, TW;
Rei-Jay Hsieh, Miaoli County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a substrate; a first gate stack disposed on the substrate; a second gate stack disposed on the substrate, wherein a metal component of the first gate stack is different from a metal component of the second gate stack; and a dielectric structure disposed over the substrate and between the first gate stack and the second gate stack, in which the dielectric structure is separated from the first gate stack and the second gate stack, and a distance between the dielectric structure and the first gate stack is substantially equal to a distance between the dielectric structure and the second gate stack.