The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2022

Filed:

Jan. 21, 2020
Applicant:

Carl Zeiss Sms Ltd., Misgav, IL;

Inventor:

Joachim Welte, Darmstadt, DE;

Assignee:

Carl Zeiss SMS Ltd., D.N. Misgav, IL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/84 (2012.01); G01N 21/88 (2006.01); G01N 21/95 (2006.01); G03F 7/20 (2006.01); G06T 7/00 (2017.01);
U.S. Cl.
CPC ...
G03F 1/84 (2013.01); G01N 21/8851 (2013.01); G01N 21/9501 (2013.01); G03F 7/7065 (2013.01); G06T 7/0004 (2013.01); G06T 2207/10061 (2013.01); G06T 2207/30148 (2013.01);
Abstract

Method for compensating at least one defect of a mask blank, wherein the method includes the following steps: (a) obtaining data in respect of a position of the at least one defect of the mask blank; (b) obtaining design data for pattern elements which should be produced on the mask blank; (c) determining whether the at least one defect is arranged relative to a pattern element to be produced in such a way that it has substantially no effect when exposing a wafer using the mask blank that is provided with the pattern element to be produced; and (d) otherwise, displacing the at least one defect on the mask blank in such a way that it has substantially no effect when exposing the wafer using the mask blank that is provided with the pattern element to be produced.


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