The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2022
Filed:
Dec. 18, 2019
Western Digital Technologies, Inc., San Jose, CA (US);
Yuankai Zheng, Fremont, CA (US);
Christian Kaiser, San Jose, CA (US);
Zhitao Diao, Fremont, CA (US);
Chih-Ching Hu, Pleasanton, CA (US);
Chen-Jung Chien, Mountain View, CA (US);
Yung-Hung Wang, San Jose, CA (US);
Dujiang Wan, San Ramon, CA (US);
Ronghui Zhou, Fremont, CA (US);
Ming Mao, Dublin, CA (US);
Ming Jiang, San Jose, CA (US);
Daniele Mauri, San Jose, CA (US);
WESTERN DIGITAL TECHNOLOGIES, INC., San Jose, CA (US);
Abstract
A tunneling magnetoresistance (TMR) sensor device is disclosed that includes one or more TMR sensors. The TMR sensor device comprises a first resistor comprising a first TMR film, a second resistor comprising a second TMR film different than the first TMR film, a third resistor comprising the second TMR film, and a fourth resistor comprising the first TMR film. The first TMR film comprises a reference layer having a first magnetization direction anti-parallel to a second magnetization direction of a pinned layer. The second TMR film comprises a reference layer having a first magnetization direction parallel to a second magnetization direction of a first pinned layer, and a second pinned layer having a third magnetization direction anti-parallel to the first magnetization direction of the reference layer and the second magnetization direction of the first pinned layer.