The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 2022

Filed:

Jan. 22, 2020
Applicant:

Nxp Usa, Inc., Austin, TX (US);

Inventors:

Peng Shao, Chandler, AZ (US);

Lianjun Liu, Chandler, AZ (US);

Assignee:

NXP USA, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81B 3/00 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00166 (2013.01); B81B 3/0021 (2013.01); B81B 2201/0235 (2013.01); B81B 2201/0242 (2013.01); B81B 2203/0307 (2013.01); B81B 2203/04 (2013.01); B81B 2203/051 (2013.01); B81B 2203/053 (2013.01); B81C 2201/0132 (2013.01);
Abstract

A device includes a substrate, a first electrode formed on the substrate and a structural layer formed on the substrate. The structural layer includes a movable mass and a fixed portion, the movable mass being suspended above the substrate and the first electrode being interposed between the substrate and the movable mass. A second electrode is spaced apart from an upper surface of the movable mass by a gap and an anchor couples the second electrode to the fixed portion of the structural layer. A method entails integrating formation of the second electrode into a wafer process flow in which the first electrode and the structural layer are formed.


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