The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2022

Filed:

Feb. 13, 2020
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Tian Shen, Clifton Park, NY (US);

Heng Wu, Guilderland, NY (US);

Kevin W. Brew, Albany, NY (US);

Jingyun Zhang, Albany, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/06 (2013.01); H01L 45/126 (2013.01); H01L 45/144 (2013.01);
Abstract

A method is presented for improved linearity of a phase change memory (PCM) cell structure. The method includes forming a bottom electrode over a substrate, constructing a PCM stack including a plurality of PCM layers each having a different crystallization temperature over the bottom electrode, and forming a top electrode over the PCM stack. The crystallization temperature varies in an ascending order from the bottom electrode to the top electrode.


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