The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2022
Filed:
Apr. 01, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Hou-Yu Chen, Zhubei, TW;
Chao-Ching Cheng, Hsinchu, TW;
Tzu-Chiang Chen, Hsinchu, TW;
Yu-Lin Yang, Baoshan Township, Hsinchu County, TW;
I-Sheng Chen, Taipei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes an isolation layer formed over a substrate, and a plurality of nanostructures formed over the isolation layer. The semiconductor device structure includes a gate structure wrapped around the nanostructures, and an S/D structure wrapped around the nanostructures. The semiconductor device structure includes a first oxide layer between the substrate and the S/D structure. The first oxide layer and the isolation layer are made of different materials. The first oxide layer is in direct contact with the isolation layer.