The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2022
Filed:
Jan. 31, 2020
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Ming Zhu, Singapore, SG;
Hui-Wen Lin, Taiping, TW;
Harry Hak-Lay Chuang, Singapore, SG;
Bao-Ru Young, Zhubei, TW;
Yuan-Sheng Huang, Taichung, TW;
Ryan Chia-Jen Chen, Chiayi, TW;
Chao-Cheng Chen, Shin-Chu, TW;
Kuo-Cheng Ching, Zhubei, TW;
Ting-Hua Hsieh, Hsinchu, TW;
Carlos H. Diaz, Mountain View, CA;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A complementary metal-oxide-semiconductor (CMOS) semiconductor device includes a substrate. The CMOS semiconductor device further includes an isolation region in the substrate. The CMOS semiconductor device further includes a P-metal gate electrode extending over the isolation region, wherein the P-metal gate electrode includes a first function metal and a TiN layer doped with a first material. The CMOS semiconductor device further includes an N-metal gate electrode extending over the isolation region, wherein the N-metal gate electrode includes a second function metal and a TiN layer doped with a second material different from the first material, a portion of the P-metal gate electrode is between a portion of the N-metal gate electrode and the substrate, and a portion of the TiN layer doped with the second material is between the portion of the P-metal gate electrode and the substrate.