The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2022

Filed:

Nov. 03, 2020
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Xinshu Cai, Singapore, SG;

Yongshun Sun, Singapore, SG;

Lanxiang Wang, Singapore, SG;

Eng Huat Toh, Singapore, SG;

Shyue Seng Tan, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/1156 (2017.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1156 (2013.01); H01L 29/0649 (2013.01);
Abstract

A memory structure may be provided, including a substrate, and a first well region, a second well region, and a third well region arranged within the substrate, where the first well region and the third well region may have a first conductivity type, and the second well region may have a second conductivity type different from the first conductivity type, and where the second well region may be arranged laterally between the first well region and the third well region. The memory structure may further include a first gate structure and a second gate structure arranged over the second well region. The first gate structure may extend over the third well region and the second gate structure may extend over the first well region.


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