The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2022

Filed:

Oct. 01, 2020
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventor:

Che-Fu Chuang, Pitou Township, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 27/11521 (2017.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76897 (2013.01); H01L 21/28132 (2013.01); H01L 21/823468 (2013.01); H01L 27/11521 (2013.01); H01L 29/6656 (2013.01);
Abstract

A method for manufacturing a semiconductor device is provided. The method includes the following steps: forming a lining layer on a substrate and a plurality of gate structures; forming a first spacer layer on the lining layer; forming a stop layer on the first spacer layer; forming a first sacrificial layer on the stop layer and between the gate structures; removing a portion of the first sacrificial layer so that the top surface of the first sacrificial layer is located between the upper portions of the gate structures; forming a second spacer layer on the first sacrificial layer and the gate structures; and removing a portion of the second spacer layer so that the remaining second spacer layer is located between the upper portions of the gate structures.


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