The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2022

Filed:

Oct. 30, 2020
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Ryo Terashima, Miyagi, JP;

Yuzuru Sakai, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); H01J 37/32449 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01L 21/32137 (2013.01); H01J 2237/3341 (2013.01);
Abstract

A plasma processing method of etching an organic film through a mask having an opening is provided. The mask is formed on the organic film, and is made of a silicon-containing film. The method includes rectifying a shape of the mask. The rectifying of the shape of the mask includes refining a side wall of the opening of the mask, and etching an upper surface of the mask.


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