The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2022
Filed:
Apr. 07, 2021
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Abstract
The memory comprises a first pass gate transistor, a second pass gate transistor, a third pass gate transistor, and a fourth pass gate transistor. On-resistance of the second pass gate transistor is smaller than that of the first pass gate transistor, so that first read current flowing from a first read/write port of a first group of read/write dual ports is equal to second read current flowing from a second read/write port of the first group of read/write dual port. On-resistance of the fourth pass gate transistor is smaller than that of the third pass gate transistor, so that third read current flowing from a first read/write port of a second group of read/write dual ports is equal to fourth read current flowing from a second read/write port of the second group of read/write dual port.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile