The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2022
Filed:
Feb. 19, 2020
International Business Machines Corporation, Armonk, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Ali Khakifirooz, Los Altos, CA (US);
Ghavam G. Shahidi, Pound Ridge, NY (US);
Davood Shahrjerdi, White Plains, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor structure capable of real-time spatial sensing of nanoparticles within a nanofluid is provided. The structure includes an array of gate structures. An interlevel dielectric material surrounds the array of gate structures. A vertical inlet channel is located within a portion of the interlevel dielectric material and on one side of the array of gate structures. A vertical outlet channel is located within another portion of the interlevel dielectric material and on another side of the array of gate structures. A horizontal channel that functions as a back gate is in fluid communication with the vertical inlet and outlet channels, and is located beneath the array of gate structures. A back gate dielectric material portion lines exposed surfaces within the vertical inlet channel, the vertical outlet channel and the horizontal channel.