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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11378459 B1

PDFFull Text
Date of Patent:
Jul. 05, 2022

Filed:

Aug. 29, 2018

Infrared sensor structure

Applicant:

Shanghai Ic R&d Center Co., Ltd., Shanghai, CN;

Inventor:

Xiaoxu Kang, Shanghai, CN;

Assignee:

SHANGHAI IC R&D CENTER CO., LTD, Shanghai, CN;

Attorneys:

Tianchen LLC.

Yuan R. Li

Yi Fan Yin

Primary Examiner:

David P Porta

Assistant Examiner:

Jeremy S Valentiner

Int. Cl.
CPC ...
G01J 5/02 (2022.01); G01J 5/08 (2022.01); G01J 5/38 (2006.01); H01H 1/00 (2006.01); H01H 37/00 (2006.01); H01L 31/024 (2014.01); H01L 31/101 (2006.01); B81B 3/00 (2006.01); H01H 37/72 (2006.01);
U.S. Cl.
CPC ...
G01J 5/024 (2013.01); B81B 3/0081 (2013.01); G01J 5/0853 (2013.01); G01J 5/38 (2013.01); H01H 1/0036 (2013.01); H01H 37/72 (2013.01); H01L 31/024 (2013.01); H01L 31/101 (2013.01); H01H 2037/008 (2013.01);
Abstract

The present disclosure discloses an infrared sensor structure, comprises a cantilever switch array, the cantilever switch array comprises cantilever switches, and each cantilever switch comprises a cantilever beam and a switch corresponding to the cantilever beam, vertical heights from the cantilever beams to the switches in different cantilever switches are different from each other, when the cantilever beams are deformed towards the switches and connect to the switches, the switches turn on; wherein, deformations of different cantilever beams produced by absorbing infrared signal are different from each other, the intensity of the infrared signal can be quantified by number of the switches on, so as to realize detection of the infrared signal. The manufacturing of the infrared sensor structure in the present disclosure can be compatible with the existing semiconductor CMOS process.

Find Patent Forward Citations

Kang, Xiaoxu. (2022). Infrared sensor structure (U.S. Patent No. 11378459). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11378459

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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