The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2022

Filed:

Aug. 07, 2020
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Fei Zhou, San Jose, CA (US);

Raghuveer S. Makala, Campbell, CA (US);

Rahul Sharangpani, Fremont, CA (US);

Yusuke Mukae, Nagoya, JP;

Naoki Takeguchi, Nagoya, JP;

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/08 (2006.01); C23C 16/448 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); C23C 16/02 (2006.01);
U.S. Cl.
CPC ...
C23C 16/4488 (2013.01); C23C 16/0209 (2013.01); C23C 16/08 (2013.01); C23C 16/45517 (2013.01); C23C 16/45565 (2013.01); C23C 16/52 (2013.01);
Abstract

A method of depositing tungsten over a substrate includes disposing the substrate into a vacuum enclosure of a tungsten deposition apparatus, performing a first tungsten deposition process that deposits a first tungsten layer over a physically exposed surface of the substrate by flowing a fluorine-containing tungsten precursor gas into the vacuum enclosure, performing an in-situ oxidation process by exposing the first tungsten layer to an oxidation agent gas while the substrate remains within the vacuum enclosure without breaking vacuum and forming a tungsten oxyfluoride gas which is pumped out of the vacuum enclosure, and performing a second tungsten deposition process that deposits a second tungsten layer on the first tungsten layer by flowing the fluorine-containing tungsten precursor gas into the vacuum enclosure in a second tungsten deposition process after the in-situ oxidation process.


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