The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2022

Filed:

Feb. 03, 2021
Applicant:

Nxp Usa, Inc., Austin, TX (US);

Inventor:

Lianjun Liu, Chandler, AZ (US);

Assignee:

NXP USA, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81C 99/00 (2010.01); G01R 27/26 (2006.01); G01R 31/26 (2020.01); G01R 31/28 (2006.01);
U.S. Cl.
CPC ...
B81C 99/004 (2013.01); G01R 27/2605 (2013.01); G01R 31/2637 (2013.01); G01R 31/2831 (2013.01);
Abstract

A wafer includes a process control monitor (PCM) structure formed on a substrate. The PCM structure includes detection and reference structures. The detection structure includes a first electrically conductive line arrangement formed in a first structural layer on the substrate and a first protection layer surrounding the first electrically conductive line arrangement. The reference structure includes a second electrically conductive line arrangement formed in the first structural layer on the substrate, a second protection layer surrounding the second electrically conductive line arrangement, an insulator material formed overlying the second electrically conductive line arrangement and the second protection layer, and a second structural layer overlying the insulator material. The insulator material does not overlie the detection structure. Methodology entails measuring a capacitance between the detection structure and the substrate, measuring another capacitance between the reference structure and substrate, and comparing the two capacitances to determine whether defects exist.


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