The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2022
Filed:
Sep. 14, 2018
Applicant:
Horiba, Ltd., Kyoto, JP;
Inventors:
Assignee:
HORIBA, Ltd., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/026 (2006.01); H01S 5/0625 (2006.01); H01S 5/34 (2006.01); H01S 5/06 (2006.01); H01S 5/12 (2021.01); H01S 5/068 (2006.01); H01S 5/028 (2006.01); H01S 5/062 (2006.01); H01S 5/0683 (2006.01); H01S 5/0687 (2006.01);
U.S. Cl.
CPC ...
H01S 5/0261 (2013.01); H01S 5/0612 (2013.01); H01S 5/06258 (2013.01); H01S 5/1203 (2013.01); H01S 5/3402 (2013.01); H01S 5/0287 (2013.01); H01S 5/0687 (2013.01); H01S 5/06246 (2013.01); H01S 5/06804 (2013.01); H01S 5/06837 (2013.01);
Abstract
Provided is a semiconductor laser including: a core layer having an active layer and a diffraction grating layer optically coupled to the active layer; and paired clad layers arranged sandwiching the core layer, and formed with a waveguide along the core layer, and the semiconductor laser includes: a flat layer provided continuously with the diffraction grating layer along the waveguide; and a temperature control mechanism for controlling the temperature of the flat layer to a temperature different from that of the diffraction grating layer.