The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2022
Filed:
Aug. 19, 2020
Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai, CN;
Abstract
The present disclosure discloses a trench gate semiconductor device, wherein a trench gate includes a trench formed in a semiconductor substrate, and a gate oxide layer formed on a bottom surface and a side surface of the trench; the gate oxide layer is formed by stacking a first oxide layer and a second oxide layer; the first oxide layer is a furnace tube thermal oxide layer; the second oxide layer is a PECVD oxide layer; the gate oxide layer has a thermally densified structure processed by means of RTA. The present disclosure also discloses a method for manufacturing a trench gate semiconductor device. The present disclosure can increase BVGSS of the device, without affecting the threshold voltage of the device, with simple processes and low costs.