The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2022
Filed:
Jul. 17, 2019
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventor:
Satoshi Takagi, Nirasaki, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/02 (2006.01); C23C 16/02 (2006.01); H01L 21/3205 (2006.01); C23C 16/24 (2006.01); H01L 21/285 (2006.01); C23C 16/44 (2006.01); H01L 21/3065 (2006.01); H01L 21/324 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); C23C 16/0227 (2013.01); C23C 16/0236 (2013.01); C23C 16/24 (2013.01); C23C 16/44 (2013.01); H01L 21/02049 (2013.01); H01L 21/0262 (2013.01); H01L 21/02068 (2013.01); H01L 21/02123 (2013.01); H01L 21/02172 (2013.01); H01L 21/02263 (2013.01); H01L 21/2855 (2013.01); H01L 21/3065 (2013.01); H01L 21/324 (2013.01); H01L 21/32055 (2013.01); H01L 21/32137 (2013.01); H01L 21/67017 (2013.01); H01L 21/67098 (2013.01); H01L 21/67248 (2013.01);
Abstract
A film forming method includes: removing a natural oxide film formed on a front surface of a metal-containing film by supplying a hydrogen fluoride gas to a substrate accommodated in a processing container, the substrate having the metal-containing film formed thereon, and the metal-containing film including no metal oxide film; and forming a silicon film on the metal-containing film by supplying a silicon-containing gas into the processing container, wherein the step of forming the silicon film occurs after the step of removing the natural oxide film.