The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2022
Filed:
Jun. 21, 2019
Applicant:
Hitachi High-tech Corporation, Tokyo, JP;
Inventors:
Yusuke Nagamitsu, Tokyo, JP;
Takeshi Shima, Tokyo, JP;
Takeshi Shimada, Tokyo, JP;
Hayato Watanabe, Tokyo, JP;
Assignee:
HITACHI HIGH-TECH CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30655 (2013.01); H01L 21/02238 (2013.01); H01L 21/02252 (2013.01); H01L 21/823481 (2013.01); H01L 21/76224 (2013.01); H01L 21/823431 (2013.01);
Abstract
There is provided a plasma processing method for forming shallow trench isolation (STI) on a silicon substrate, the plasma processing method including: a trench forming step of forming a trench in the silicon substrate by using plasma generated by pulse-modulated radio frequency power; and an oxidation step of oxidizing the silicon substrate by using only oxygen gas which is performed after the trench forming step, in which the trench forming step and the oxidizing step are repeated a plurality of times.