The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 21, 2022

Filed:

Aug. 27, 2019
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Anupam Dutta, Bangalore, IN;

Balaji Swaminathan, Bangalore, IN;

Assignee:

GlobalFoundries U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/00 (2006.01); G01R 31/26 (2020.01); G01R 31/28 (2006.01); H01L 21/84 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 29/10 (2006.01); G06F 30/367 (2020.01);
U.S. Cl.
CPC ...
H01L 29/78615 (2013.01); G01R 31/2601 (2013.01); G01R 31/2623 (2013.01); G06F 30/367 (2020.01); H01L 27/1203 (2013.01); H01L 29/1079 (2013.01); G01R 31/2621 (2013.01);
Abstract

Test structures for a body-contacted field effect transistor (BCFET) include: a single-pad structure with body contact and probe pad regions connected to a channel region at first and second connection points with a known separation distance between the connection points; and a multi-pad structure with a body contact region connected to a channel region at a first connection point and multiple probe pad regions connected to the channel region at second connection points that are separated from the first connection point by different separation distances. A method includes: determining separation distance-dependent internal body potentials at the second connection points in response to different bias conditions by using either multiple single-pad structures, each having a different separation distance between the connection points, or by using a multi-pad structure; and based on the separation distance-dependent internal body potentials, generating a model representing the BCFET with body-contacted and floating body devices.


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