The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 21, 2022

Filed:

Apr. 21, 2020
Applicant:

Mediatek Inc., Hsinchu, TW;

Inventors:

Jing-Chyi Liao, Hsinchu, TW;

Ching-Chung Ko, Hsinchu, TW;

Zheng Zeng, San Jose, CA (US);

Assignee:

MEDIATEK INC., Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7831 (2013.01); H01L 29/7816 (2013.01);
Abstract

A semiconductor device structure is provided. A first well region with a first type of conductivity is formed over a semiconductor substrate. A second well region with a second type of conductivity is formed over the semiconductor substrate. A well region is formed over the semiconductor substrate and between the first and second well regions. A first gate structure is disposed on the well region and partially over the first and second well regions. A drain region is in the first well region. A source region and a bulk region are in the second well region. The drain region, the source region and the bulk region have the first type of conductivity. A second gate structure is disposed on the second well region, and separated from the first gate structure by the source region and the bulk region.


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