The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 21, 2022

Filed:

Feb. 05, 2021
Applicant:

Disco Corporation, Tokyo, JP;

Inventor:

Masaru Nakamura, Tokyo, JP;

Assignee:

DISCO CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 23/544 (2006.01); B23K 26/08 (2014.01); B23K 26/02 (2014.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); B23K 26/02 (2013.01); B23K 26/0861 (2013.01); H01L 23/544 (2013.01); H01L 2223/5446 (2013.01);
Abstract

Provided is a wafer processing method for dividing a wafer having devices formed on a front side thereof into individual device chips, the front side being partitioned by a plurality of crossing division lines having a testing metal pattern formed in part thereof into a plurality of regions where the respective devices are formed. The method includes a first modified layer forming step of applying a laser beam of a wavelength having a transmitting property to the wafer with a focal point of the laser beam positioned inside the wafer at a first depth from the back side, thereby forming a first modified layer along a division line, and a second modified layer forming step of applying the laser beam with the focal point positioned at a second depth shallower than the first depth, thereby forming a second modified layer along the same division line.


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