The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2022
Filed:
Sep. 17, 2019
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Paul McHugh, Kalispell, MT (US);
Kwan Wook Roh, Kalispell, MT (US);
Gregory J. Wilson, Kalispell, MT (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/288 (2006.01); G06F 30/394 (2020.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76883 (2013.01); G06F 30/394 (2020.01); H01L 21/2885 (2013.01); H01L 21/76816 (2013.01); H01L 21/76877 (2013.01); H01L 23/522 (2013.01);
Abstract
Exemplary methods of producing a semiconductor substrate may include characterizing a substrate pattern to identify a zonal distribution of a plurality of vias and a height and a radius of each via of the plurality of vias. The methods may include determining a fill rate for each via within the zonal distribution of the plurality of vias. The methods may include modifying a die pattern to adjust via fill rates between two zones of vias. The methods may also include producing a substrate according to the die pattern.