The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 21, 2022

Filed:

Mar. 02, 2020
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Junichi Hashimoto, Yokkaichi Mie, JP;

Kaori Narumiya, Yokkaichi Mie, JP;

Kosuke Horibe, Yokkaichi Mie, JP;

Soichi Yamazaki, Yokkaichi Mie, JP;

Kei Watanabe, Yokkaichi Mie, JP;

Yusuke Kondo, Yokkaichi Mie, JP;

Mitsuhiro Omura, Nagoya Aichi, JP;

Takehiro Kondoh, Yokkaichi Mie, JP;

Yuya Matsubara, Yokkaichi Mie, JP;

Junya Fujita, Nagoya Aichi, JP;

Toshiyuki Sasaki, Yokkaichi Mie, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/033 (2006.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/0332 (2013.01); H01L 21/31122 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01);
Abstract

According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The method further includes forming a recess in the first film using the second film as a mask. The second film includes a first layer having carbon and a second layer having carbon formed on the first layer. The second layer has a second carbon density lower than a first carbon density of the first layer.


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