The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 21, 2022

Filed:

Jul. 25, 2019
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Kosuke Ogasawara, Miyagi, JP;

Kentaro Yamaguchi, Miyagi, JP;

Takanori Banse, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/311 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32091 (2013.01); H01J 37/32422 (2013.01); H01J 37/32449 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01L 21/67069 (2013.01); H01J 2237/334 (2013.01);
Abstract

A plasma processing method includes: placing a substrate on a substrate support provided in a chamber of a capacitively coupled plasma processing apparatus where the substrate includes a silicon-containing film and a mask provided on the silicon-containing film and having an opening having a longitudinal direction; and supplying an inert gas into the chamber; and selectively performing one of supplying a first radio-frequency power to an upper electrode of the plasma processing apparatus to generate plasma from the inert gas and supplying a second radio-frequency power to a lower electrode of the plasma processing apparatus included in the substrate support, and applying a negative bias voltage to the upper electrode to cause positive ions from the plasma to collide with the upper electrode and release a silicon-containing material from the upper electrode, thereby depositing the silicon-containing material on the substrate.


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